Modelling of through-hole electrodeposition - Part I: Effect of electricalmigration

Authors
Chan, SH Cheh, HY
Citation
Sh. Chan et Hy. Cheh, Modelling of through-hole electrodeposition - Part I: Effect of electricalmigration, J APPL ELEC, 31(6), 2001, pp. 605-616
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF APPLIED ELECTROCHEMISTRY
ISSN journal
0021891X → ACNP
Volume
31
Issue
6
Year of publication
2001
Pages
605 - 616
Database
ISI
SICI code
0021-891X(2001)31:6<605:MOTE-P>2.0.ZU;2-G
Abstract
A quantitative investigation was conducted on the effect of electrical migr ation on the current distribution in through-hole electrodeposition. Polari zation, surface concentration and current distribution were computed as fun ctions of the geometry of the through-hole, electrolyte flow rate, applied current density and concentration of the supporting electrolyte. Results we re compared with those from a simplified model in which the electric field was neglected within the diffusion layer.