Topographic study of sputter-deposited film with different process parameters

In this study, molecular dynamics simulation is employed to investigate the surface topography of thin films produced by the sputtering process for di fferent parameters such as substrate temperature, incident energy, and inci dent angle. Interface width is used to quantify the quality of the deposite d film. The Morse potential is used to model the atomic interaction between atoms. From the results of this study, it is found that for lower substrat e temperature, lower incident energy, and larger incident angle, the growin g film structure tends toward a three-dimensional columnar structure, and a rougher film is produced. Conversely, for higher substrate temperature, hi gher incident energy, and smaller incident angle, the growing film structur e tends toward a two-dimensional (Frank-van der Merwe) quasi-layer-by-layer structure, and a smoother film is produced. Finally, average surface kinet ic energy is found to be an important factor in determining the surface pro perties produced in the process. Generally, the produced film is smoother w hen the average surface kinetic energy is larger. (C) 2001 American Institu te of Physics.