Structural, optical, and electrical characterization of hot wall epitaxy grown 1-methoxy-8-hydroxy-9,10-anthraquinone films

1-methoxy-8-hydroxy-9,10-anthraquinone compound has been synthesized and it s films are grown by the hot wall epitaxy technique onto the glass substrat es kept at different temperatures in a vacuum of 10(-5) Torr. The experimen tal conditions are optimized to obtain better crystallinity of the films. T he films so prepared have been studied for their structural, optical, and e lectrical properties. Observations reveal that the crystallinity of the fil ms increases with an increase in substrate temperature. Crystallites as lar ge as 3.30 mum are observed in the case of films deposited at 348 K. Analys is of optical absorption measurements on the films indicate that the interb and transition energies lies in the range 1.87-2.02 eV. The conduction in t hese films is found to be ohmic in nature and appears to take place by ther mally activated hopping above intermolecular barriers. The electrical resis tivity of films decreases with the increase in temperature, while carrier c oncentration increases. (C) 2001 American Institute of Physics.