Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields

Authors
Tsai, FY Lee, CP Voskoboynikov, O Cheng, HH Shen, JX Oka, Y
Citation
Fy. Tsai et al., Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields, J APPL PHYS, 89(12), 2001, pp. 7875-7878
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
12
Year of publication
2001
Pages
7875 - 7878
Database
ISI
SICI code
0021-8979(20010615)89:12<7875:TPSOIQ>2.0.ZU;2-5
Abstract
The exciton dynamics in InxGa1-xAs/GaAs quantum wells grown on (111)B and ( 100) GaAs substrates were studied by time-resolved photoluminescence (PL) u nder magnetic fields in a Faraday configuration. We have found that the pie zoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. (C) 2001 American Inst itute of Physics.