Fowler-Nordheim conduction in polysilicon (n(+))-oxide-silicon (p) structures: Limit of the classical treatment in the barrier height determination

Fowler-Nordheim current in Si-poly (n(+))-SiO2-Si(p) structures, with an ox ide thickness varying between 3 and 12 nm, has been measured and numericall y computed with the exact electric field in the oxide, the field dependence of the barrier shape with the image force, and the temperature effects. Th e fit of the experimental data leads to an accurate determination of the el ectron affinity difference and the barrier height at the emitting Si-poly ( n(+))-gate-electrode-oxide interface. The evolution of these two parameters with temperature is discussed in relation with the oxide thickness. (C) 20 01 American Institute of Physics.