Single-electron tunneling in highly doped silicon nanowires in a dual-gateconfiguration

Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. I n our devices, silicon nanostructures are embedded into a metal-oxide-silic on configuration. The single-electron effects can be tuned both by an in-pl ane sidegate, as well as by a metallic topgate, a technology which is compa tible with large-scale integration of single-electron devices with dimensio ns down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. (C) 20 01 American Institute of Physics.