Lateral patterning of highly doped silicon-on-insulator films allows us to
observe conductance oscillations due to single-electron charging effects. I
n our devices, silicon nanostructures are embedded into a metal-oxide-silic
on configuration. The single-electron effects can be tuned both by an in-pl
ane sidegate, as well as by a metallic topgate, a technology which is compa
tible with large-scale integration of single-electron devices with dimensio
ns down to 10 nm. We compare the influence of different gating electrodes,
important for ultralarge scale integration, on the electron islands. (C) 20
01 American Institute of Physics.