Thermally assisted decay of pinning in polycrystalline exchange biased systems (invited)

Citation
Mj. Carey et al., Thermally assisted decay of pinning in polycrystalline exchange biased systems (invited), J APPL PHYS, 89(11), 2001, pp. 6579-6584
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
6579 - 6584
Database
ISI
SICI code
0021-8979(20010601)89:11<6579:TADOPI>2.0.ZU;2-Q
Abstract
The exchange field decays when spin valves are subjected to a field that ro tates the pinned layer towards the reverse direction. The decay results fro m a competition between the torque on the interfacial AF spins from the pin ned layer, which lowers the barrier for thermal switching, and the KuV prod uct of the AF grains, which provide stability. Typical values of the decay rates at 125 degreesC vary between 5-35%/decade, depending upon the AF. A c omparison of the thermal decay-rates for many AF's important for spin valve heads shows that IrMn (blocking temperature, T-b similar to 250 degreesC) is the most stable, followed by NiMn (350 degreesC), PtMn (325 degreesC) an d NiO (200 degreesC). An Arrhenius-type model is presented which fits the d ata well. This model is used to estimate the anisotropy constants of NiMn a nd IrMn to be 5 x 10(5) and 2 x 10(6) erg/cm(3), respectively. Thermally ac tivated reversal of the AF results in T-b often being less than T-N, and a peak in the pinned layer coercivity observed near T-b. (C) 2001 American In stitute of Physics.