Ion irradiation is an excellent tool to modify magnetic properties on the s
ubmicrometer scale, without modification of the sample topography. We utili
ze this effect to magnetically pattern exchange bias double layers using re
sist masks patterned by electron-beam lithography. Ion irradiation through
the masks leads to a lateral modification of the magnetization reversal beh
avior and allows one to study the magnetization reversal as a function of t
he exchange bias field strength on a single sample. Results are presented o
n the macroscopic and microscopic magnetization reversal using the magneto-
optic Kerr effect and magnetic force microscopy, respectively. (C) 2001 Ame
rican Institute of Physics.