Comparison of defect density measurements in magnetic tunnel junctions

Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. The quality of the insulating layers of these devices must be analyzed. We use electrodeposition to decorate pi nholes and analyze the density of pinholes and pinhole precursors. Electric al breakdown measurements can also be performed on magnetic tunnel junction s to predict the probability of such devices failing. We discuss both exper imental methods and compare the results obtained. It is observed that the t wo methods yield the same results for the areal defect density. (C) 2001 Am erican Institute of Physics.