40% tunneling magnetoresistance after anneal at 380 degrees C for tunnel junctions with iron-oxide interface layers

Spin tunnel junctions fabricated with one interposed Fe-FeOx layer between the Al2O3 barrier and the top CoFe pinned electrode show large tunneling ma gnetoresistance (TMR) (40%) for anneals up to 380 degreesC. The annealing t emperature T-TMR*, where maximum TMR occurs, increases with the inserted Fe -FeOx layer thickness. For samples with thicker inserted layer, the pinned layer moment (which usually starts to decay below 300 degreesC in the norma l junctions) increases with annealing temperature up to 380 degreesC and re mains at a maximum until 450 degreesC. The large TMR at high temperature is related with the diffusion of extra Fe (from the Fe-FeOx layer) into the e lectrode interfacial region and the as-deposited paramagnetic FeOx decompos ition into metallic Fe, and possibly the formation of some Fe3O4, which com pensate the interface polarization loss associated with Mn interdiffusion. Rutherford backscattering spectrometry analysis confirms partial Fe diffusi on into the top CoFe electrode after anneal. Meanwhile, x-ray photoelectron spectra for the Fe 2p core level show that the FeOx contribution in the up per part of the inserted layer decreases upon annealing, while it increases in the inner part near the barrier, suggesting the FeOx decomposition and the oxygen diffusion toward the inner metallic Fe and Al barrier. The study of R x A values and barrier parameters versus annealing temperature for sa mples with 7 and 25 Angstrom Fe-FeOx also reflects the above structural cha nges in the inserted layer. (C) 2001 American Institute of Physics.