Thermal stability of Ta-pinned spin valves

Citation
Ra. Fry et al., Thermal stability of Ta-pinned spin valves, J APPL PHYS, 89(11), 2001, pp. 6825-6827
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
6825 - 6827
Database
ISI
SICI code
0021-8979(20010601)89:11<6825:TSOTSV>2.0.ZU;2-V
Abstract
It has recently been found that large uniaxial anisotropy fields in excess of 120 kA/m (1500 Oe) can be created in thin (3-5 nm) films of Co by obliqu ely sputtered Ta underlayers. This anisotropy can be used to pin the bottom film of a spin valve while having only a modest effect on the top "free" f ilm, separated by a 2.5 nm Cu spacer layer. This article describes measurem ents of thermal stability in these Ta-pinned spin valves. Using room temper ature giant magnetoresistance (GMR) as a measure, we find that the structur e is stable under cumulative 20 min anneals at 25 degreesC intervals up to 300 degreesC; GMR decreases to zero upon further anneals up to 450 degreesC . Measurements taken at elevated temperatures reveal that GMR decreases lin early with temperature, extrapolating to zero at approximately 425 degreesC , while the anisotropy field is much less temperature dependent, remaining nearly constant up to 150 degreesC and gradually decreasing to 50% of its r oom temperature value at 325 degreesC. (C) 2001 American Institute of Physi cs.