Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer

Citation
Yj. Wang et al., Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer, J APPL PHYS, 89(11), 2001, pp. 6994-6996
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
6994 - 6996
Database
ISI
SICI code
0021-8979(20010601)89:11<6994:MSITAC>2.0.ZU;2-O
Abstract
On the basis of a micromagnetic model, magnetization reversal in two antife rromagnetically coupled ferromagnetic layers (10 nm t(1)/0.9 nmM/t(2) nm fi lms with t(2) = 2, 3, 4, 5 nm, here t(1) and t(2) are the top and bottom la yers, respectively, and M the spacer) with the same random anisotropy arran gement can be represented by a computer simulation. The calculation indicat es that the appearance of a full antiferromagnetic coupling at remanence re quires the antiferromagnetic coupling constant j = -3.5 erg/cm(2) for the 1 0 nm t(1)/0.9 nmM/3 nm t(2), films and it needs a large j value if t(2) inc reases for the case of K-u2 = K-u1 = 1 x 10(6) erg/cm(3) and M-s1 = M-s2 = 400 emu/cm(3). H-c follows the equation H-c = -0.755j/M(s)t(1) (j < 0). Why the calculated H-c values deviate from H-c(max) = -j/M(s)t(1) is discussed . (C) 2001 American Institute of Physics.