Positive giant magnetoresistance in ferrimagnetic/Cu/ferrimagnetic films

Citation
Ch. Lai et al., Positive giant magnetoresistance in ferrimagnetic/Cu/ferrimagnetic films, J APPL PHYS, 89(11), 2001, pp. 7124-7126
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
7124 - 7126
Database
ISI
SICI code
0021-8979(20010601)89:11<7124:PGMIFF>2.0.ZU;2-O
Abstract
Spin valves composed of ferrimagnetic/Cu/ferrimagnetic layers were fabricat ed with the magnetization perpendicular to the film planes. By changing the composition of ferrimagnetic layers, both negative and positive giant magn etoresistance (GMR) can be observed in ferrimagnetic spin valves. For sampl es consisting of both transition-metal (TM-) rich TbFeCo and GdFeCo, negati ve GMR values were obtained. Due to the high resistivity of amorphous ferri magnetic films, the shunting effect of Cu led to relatively small MR ratio. The negative MR effect was 1% for 1.7 nm Cu. For spin valves consisting of rare-earth (RE-)rich TbFeCo and TM-rich GdFeCo, positive GMR values were o bserved. A thin layer of Co was inserted between RE-rich TbFeCo and Cu to m anipulate the sign of GMR. (C) 2001 American Institute of Physics.