Electronic properties of UIrGe in high magnetic fields

UIrGe crystallizes in the orthorhombic TiNiSi structure and exhibits a larg e magnetic anisotropy. Here, we present the results of magnetoresistance an d specific-heat studies of single-crystalline UIrGe in magnetic fields up t o 18 T applied along the principal axes. The phase boundaries of the zero-f ield antiferromagnetic phase (T-N approximate to 14.1 K) are established, a nd we find evidence of a field-induced phase above 12.5 T at 2.1 K and 14 T at 2.5 K for magnetic fields applied along the b and c axis, respectively. (C) 2001 American Institute of Physics.