J. Shirakashi et Y. Takemura, Tunnel magnetoresistance on ferromagnetic single-electron transistors withmultiple tunnel junction, J APPL PHYS, 89(11), 2001, pp. 7365-7367
Single-electron transistors with ferromagnetic multiple tunnel junctions ar
e studied theoretically. Tunnel magnetoresistance under the Coulomb blockad
e regime is modulated by the gate voltage and is increased with increasing
the number of tunnel junctions. Higher-order tunneling processes, especiall
y for inelastic macroscopic quantum tunneling of charge, play an important
role in the enhancement of the tunnel magnetoresistance. This implies that
the tunnel magnetoresistance of the ferromagnetic single-electron transisto
r could be controlled by the gate and drain voltages and the number of the
tunnel junctions. (C) 2001 American Institute of Physics.