Fabrication of Ge1-xMnxTe ferromagnetic fine structure using phase change technology

We present a novel fabrication method of desirable ferromagnetic fine struc ture patterns in an amorphous GeMnTe film by using phase change optical dis k technology. The a-Ge1-xMnxTe films are prepared by the rf sputtering and ionized-cluster beam (ICB) methods. The characteristics of crystalline wire fabricated by irradiating a laser beam in a-Ge1-xMnxTe films are reported. The ferromagnetic crystalline wire pattern of 1 mum in width is successful ly formed in this experiment. The magnetic property of crystalline wire for the sputtering methods is similar to that for the ICB method. Magnetoresis tance exhibits the negative in both cases of the magnetic fields applied al ong the longitudinal and transverse directions of crystalline wires. Throug h the measurement of the magnetic field angular dependence of magnetroresis tance, anisotropic magnetoresistance-like behavior is observed in a diluted magnetic semiconductor system. (C) 2001 American Institute of Physics.