The spin-valve transistor: Fabrication, characterization, and physics (invited)

An overview is given of the fabrication, basic properties, and physics of t he spin-valve transistor. We describe the layout of this three-terminal fer romagnet/semiconductor hybrid device, as well as the operating principle. F abrication technologies are discussed, including vacuum metal bonding. We c haracterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, an d noise behavior. Furthermore, we illustrate the unique possibilities of th e spin-valve transistor for fundamental studies of the physics of hot-elect ron spin transport in magnetic thin film structures. (C) 2001 American Inst itute of Physics.