Magnetotransport properties of single crystal Co2MnGe/NM/Co2MnGe trilayersepitaxially grown on GaAs (001)

The magnetotransport properties of single crystal trilayers 60 Angstrom Co2 MnGe/NM/30 Angstrom Co2MnGe where NM is a nonmagnetic spacer material has b een studied. The samples were grown by molecular beam epitaxy on GaAs (001) substrates. The 2 to 1 ratios in thickness of the Co2MnGe layers allows fo r the easy determination of which ferromagnetic layers have switched during magnetometry measurements. A weak 90 degrees coupling has been observed in trilayers with either a Mn or a V spacer layer. In these coupled films a g iant magnetoresistance type magnetoresistance of less than 1% has been meas ured at room temperature. (C) 2001 American Institute of Physics.