Band parameters for III-V compound semiconductors and their alloys

We present a comprehensive, up-to-date compilation of band parameters for t he technologically important III-V zinc blende and wurtzite compound semico nductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of t he existing literature, complete and consistent parameter sets are given fo r all materials. Emphasizing the quantities required for band structure cal culations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for el ectrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperatur e and alloy-composition dependences where available. Heterostructure band o ffsets are also given, on an absolute scale that allows any material to be aligned relative to any other. (C) 2001 American Institute of Physics.