Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples

Er-related luminescence near 1.54 mum (similar to 805 meV) is observed unde r below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted sampl es. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved g reen and red luminescences are observed in implanted samples. The dependenc e of luminescence on the excitation energy as well as the influence of diff erent nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spect rometry, different lattice sites for the optical active Er-related centers are identified. (C) 2001 American Institute of Physics.