Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

Quantum calculations of the current-voltage characteristics of metal/wide-g ap/narrow-gap semiconductor heterostructures have been performed in order t o analyze the pure tunneling and thermally assisted current contributions. The InAlAs/InGaAs material system lattice matched to an InP substrate, with the InAlAs layer acting as a single semiconductor barrier, shows pronounce d quantum size effects which yield resonant tunneling paths. On the basis o f the nonlinear current-voltage characteristics, it is shown that an optimu m barrier configuration can be found. Some consequences from the device vie wpoint are finally discussed. (C) 2001 American Institute of Physics.