Carrier dynamics modeling in a precharged Si/CaF2 heterostructure

Authors
Liniger, M Kholod, AN Menard, S Borisenko, VE Bassani, F Guirleo, G d'Avitaya, FA
Citation
M. Liniger et al., Carrier dynamics modeling in a precharged Si/CaF2 heterostructure, J APPL PHYS, 89(11), 2001, pp. 6281-6284
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
1
Pages
6281 - 6284
Database
ISI
SICI code
0021-8979(20010601)89:11<6281:CDMIAP>2.0.ZU;2-8
Abstract
We examine theoretically charge carrier transport across a Si/CaF2 layered heterostructure by using an equivalent lumped-element circuit. We consider a structure has been precharged by a negative pulse. The resulting charge a ccumulation produces a nonmonotonic current-voltage (I-V) characteristic du ring a subsequent positive voltage sweep. We examine the dependence of the I-V characteristic on the magnitude and duration of the precharging bias pu lse. (C) 2001 American Institute of Physics.