We investigate a current gain degradation mechanism in self-aligned InP/InG
aAs heterojunction bipolar transistors. We show that surface level pinning
at the emitter sidewall gives rise to a peripheral emitter injection curren
t into the base which increases the base current due to electrons recombini
ng at the base contacts. The surface charge at the extrinsic base surface c
auses the formation of a conducting channel which further enhances the elec
tron flow from the emitter to the base contacts. Two-dimensional numerical
simulations of the emitter region combined with Monte-Carlo simulations of
the injection process at the abrupt base-emitter heterojunction are in good
agreement with the measurements. This effect will be especially severe for
submicron emitter widths where the emitter perimeter to emitter area ratio
is large. (C) 2001 American Institute of Physics.