Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes

The temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes is investigated. From the elec troluminescence spectra measured at various temperatures, it is found that there are two peaks at about 400 and 460 nm, which can be assigned as Mg-re lated and quantum well transitions, respectively. The behavior of these two peaks with temperature is modeled by the two rate equation. Based on this model, we deduce the activation energy of Mg in GaN films to be about 126 m eV, which is consistent with reported results obtained by other techniques. (C) 2001 American Institute of Physics.