SPIN-POLARIZED TUNNELING MAGNETORESISTIVE EFFECT IN FERROMAGNET INSULATOR/FERROMAGNET JUNCTIONS/

Authors
MIYAZAKI T TEZUKA N KUMAGAI S
Citation
T. Miyazaki et al., SPIN-POLARIZED TUNNELING MAGNETORESISTIVE EFFECT IN FERROMAGNET INSULATOR/FERROMAGNET JUNCTIONS/, Physica. B, Condensed matter, 237, 1997, pp. 256-260
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
237
Year of publication
1997
Pages
256 - 260
Database
ISI
SICI code
0921-4526(1997)237:<256:STMEIF>2.0.ZU;2-J
Abstract
Current status on the study of spin-polarized tunneling magnetoresisti ve effect was reviewed. Special emphasis was placed on the tunneling b arrier height dependence of magnetoresistance ratio and interlayer exc hange coupling in the microstructured junctions made by photolithograp hy.