A NEW HEUSLER-TYPE NITRIDE TICONXSN PRODUCED BY GAS-PHASE NITROGENATION

Authors
MAKIHARA Y NOBATA T KURISU M
Citation
Y. Makihara et al., A NEW HEUSLER-TYPE NITRIDE TICONXSN PRODUCED BY GAS-PHASE NITROGENATION, Physica. B, Condensed matter, 237, 1997, pp. 551-553
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
237
Year of publication
1997
Pages
551 - 553
Database
ISI
SICI code
0921-4526(1997)237:<551:ANHNTP>2.0.ZU;2-V
Abstract
The result of gas-phase nitrogenation for the TiCoSn compound is repor ted. The cell volume of the synthesized nitride TiCoNo0.33Sn with Heus ler-type structure is 3.3% greater than for the parent compound. It is concluded that the TiCoSn nitride is a simple gas-solid solution with intermediate nitrogen contents and that the nitrogen atoms in the nit rides are introduced into the vacancy sublattice sites in the parent c ompound.