Ferroelectric SrBi2Ta2O9 single-crystal growth and characterization

Citation
B. Sih et al., Ferroelectric SrBi2Ta2O9 single-crystal growth and characterization, J MATER RES, 16(6), 2001, pp. 1726-1733
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
6
Year of publication
2001
Pages
1726 - 1733
Database
ISI
SICI code
0884-2914(200106)16:6<1726:FSSGAC>2.0.ZU;2-P
Abstract
Using a new composite flux and an improved growth process, large and high-q uality ferroelectric SrBi2Ta2O9 (SBT) single crystals (up to 25 x 20 mm(2) area) were successfully grown from high-temperature solutions. The effects of chemical, thermodynamic, and kinetic parameters on the growth results we re systematically studied. The optimum system for the growth of SET crystal s has been identified. B2O3 additive was shown to play an important role in improving the effectiveness of the Bi2O3 solvent. The grown SET single cry stals exhibit a dominant (001)-orientation and large single-domain areas. T he dielectric and ferroelectric properties measured in relation to crystal orientations have confirmed the absence of any polarization component norma l to the (Bi2O2)(2+) sheets of the structure, indicating a high anisotropy in the properties.