Grain boundary analysis of Lu-doped Al2O3 by EDS and EELS

Citation
H. Yoshida et al., Grain boundary analysis of Lu-doped Al2O3 by EDS and EELS, J JPN METAL, 65(5), 2001, pp. 356-360
Citations number
22
Categorie Soggetti
Metallurgy
Journal title
JOURNAL OF THE JAPAN INSTITUTE OF METALS
ISSN journal
00214876 → ACNP
Volume
65
Issue
5
Year of publication
2001
Pages
356 - 360
Database
ISI
SICI code
0021-4876(200105)65:5<356:GBAOLA>2.0.ZU;2-I
Abstract
High-temperature mechanical property in ceramics is directly related to the atomic structure and the chemical bonding strength in the grain boundaries . Transmission electron microscopy is a powerful tool to characterize the g rain boundary structure. In this paper, the atomic structure and chemical b onding state at the grain boundaries in 0.05 mol%lu(2)O(3)-doped Al2O3 poly crystalline, which shows an excellent high-temperature creep resistance, wa s investigated by high-resolution electron microscopy (HREM), energy disper sive X-ray spectroscopy (EDS), scanning transmission electron microscopy (S TEM) and electron energy loss spectroscopy (EELS). In addition, a first pri nciple molecular orbital calculation (MO) was made to examine the unoccupie d density of states and chemical bonding state at the grain boundary.