Asymmetric switching behavior of Ni/Pb-1.1(Zr0.3Ti0.7)O-3/Pt thin films

An asymmetric behavior of P-E response was observed in Ni/Pb-1.1(Zr0.3Ti0.7 )O-3/Pt multilayer thin films where Ni was used as top electrode. This inte resting phenomenon was investigated by comparative analysis of the hysteres is loops and dynamic pyroelectric responses. The PZT thin films were prepar ed under the same conditions but different Ni and Pt top electrodes were us ed in the hysteresis loop measurement, and the Pt was used as the common bo ttom electrode. It is believed that this asymmetric behavior in hysteresis loop is originated from the strong domain pinning near the top Ni electrode . Dynamic pyroelectric response to 633 nm radiation of the Ni/Pb-1.1(Zr0.3T i0.7)O-3/Pt thin films with polarization up and down was carried out. Highe r dynamic pyroelectric response was observed in the positively poled film, in which the direction of the polarization was from the top to bottom elect rode. It provides further evidence that the domain pinning near the top ele ctrode dominates the asymmetric switching behavior. (C) 2001 Elsevier Scien ce B.V. All rights reserved.