Oxidation of ion implanted silicon carbide

Thermal oxidation has been investigated in virgin and ion implanted 6H-sili con carbide (SiC). Monocrystalline SIC has been irradiated with different i ons (Si+, P+ and Al+) at a fluence sufficient to produce a continuous amorp hous layer from the surface to a depth of 650 nm. The oxidation process has been performed in dry atmosphere at several temperatures and times. The ox ide thickness has been measured with Rutherford backscattering spectrometry and ellipsometric measurements. The oxide thickness is larger when oxidati on is performed in amorphized layers with respect to unimplanted regions. O xidation of samples;amorphized with various ions of similar mass does not s how any dependence on the ion species, suggesting that the enhanced oxidati on rate is not related to the effect of the dopant, but to the breakdown of the strong covalent SIC bonds induced by the ion irradiation and to the re sultant increase in chemical reactivity. (C) 2001 Elsevier Science Ltd. All rights reserved.