Growth of large diameter silicon tube by EFG technique: modeling and experiment

Citation
A. Roy et al., Growth of large diameter silicon tube by EFG technique: modeling and experiment, J CRYST GR, 230(1-2), 2001, pp. 224-231
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
230
Issue
1-2
Year of publication
2001
Pages
224 - 231
Database
ISI
SICI code
0022-0248(200108)230:1-2<224:GOLDST>2.0.ZU;2-K
Abstract
Edge-defined film-fed growth is a widely used technique for growing silicon from its melt in the form of ribbons and hollow cylinders. The current tec hnique of octagonal tube growth is modified to successfully produce 50 cm d iameter circular tube. A generic comprehensive numerical model has been dev eloped to simulate a large diameter silicon tube growth process and design the growth system. The magnetic vector potential equation is solved to pred ict the induced magnetic field in the system and heat generation due to mag netic induction. The high level algorithm MASTRAPP is modified to calculate all modes of heat transfer in the various components of the system. Using this model, a parametric study has been carried out to optimize the system with respect to different controlling parameters like coil configuration. g eometry of various components of the system, meniscus height and interface position, global temperature profile, axial temperature profile in the grow n tube and power consumption. Several experiments have also been conducted to measure temperature profiles in various sections of the system that agre e well with the numerical predictions. Results presented here indicate that the model can be succesfully used to simulate and design an inductively he ated silicon tube growth system. Several 50 cm diameter silicon tubes have been succesfully grown. (C) 2001 Published by Elsevier Science B.V.