On low temperature kinetic effects in metal-organic vapor phase epitaxy ofIII-V compounds

Kinetic effects limiting the growth rate in MOVPE of III-V compounds are an alyzed. A general mechanism-the blocking of group III species adsorption si tes by methyl radicals-is suggested and accounted for in an original model of surface chemistry. using experimental data on the decomposition of group III metal-organic precursors on III-V semiconductor surfaces. The applicat ion of the model to GaAs. GaN and InP MOVPE provides a good agreement betwe en the predicted and measured growth rates in a wide range of growth condit ions and reactor types. (C) 2001 Elsevier Science B.V. All rights reserved.