Numerical simulation of point defect transport in floating-zone silicon single crystal growth

This work compares simulations of intrinsic point defect transport for a 0. 8 " crystal for two different values of the point defect recombination fact or, thereafter utilizing the model for two more commercially relevant 4 " c rystals, grown with the needle-eye technique. Using this approach to study defect transport in floating-zone configurations is the novelty of this wor k. The simulation of the thin 0.8 " crystal is compared to the qualitative Voronkov model and DLTS experiments, to give some insights on the applied r ecombination factors. The work concludes that for large crystals, grown in the vacancy region, the influence of an uncertain recombination factor is n ot as significant as for smaller crystals grown with a near critical growth parameter. (C) 2001 Elsevier Science B.V. All rights reserved.