InAs/InGaSb photodetectors grown on GaAs bonded substrates

The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. Th is technique of him transfer allowed the subsequent growth of epitaxial mat erials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlat tices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaS b substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cutoff wavelength. The superlattices grown on the alternative substrates w ere found to have uniform layers, with broader x-ray linewidths than superl attices grown on GaSb substrates.