The generic nature of the Smart-Cut((R)) process for thin film transfer

Authors
Aspar, B Moriceau, H Jalaguier, E Lagahe, C Soubie, A Biasse, B Papon, AM Claverie, A Grisolia, J Benassayag, G Letertre, F Rayssac, O Barge, T Maleville, C Ghyselen, B
Citation
B. Aspar et al., The generic nature of the Smart-Cut((R)) process for thin film transfer, J ELEC MAT, 30(7), 2001, pp. 834-840
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
30
Issue
7
Year of publication
2001
Pages
834 - 840
Database
ISI
SICI code
0361-5235(200107)30:7<834:TGNOTS>2.0.ZU;2-1
Abstract
The Smart-Cut((R)) process, based on ion implantation (hydrogen, helium) an d wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally-induced splitt ing. Cavity growth by the Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splittin g kinetics are controlled by hydrogen diffusion. In the second part, the la test results concerning new structures are presented.