Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates

Hydrogen (H) plasma passivation effects on GaAs grown on Si substrates (GaA s on Si) are investigated in detail. H plasma exposure effectively passivat es both the shallow and deep defects in GaAs on Si, which improves both the electrical and optical properties. It was found that the minority carrier lifetime is increased and the deep level concentration is decreased by the H plasma exposure. In addition, after H plasma exposure, room temperature p hotoluminescence (PL) for Al0.3Ga0.7As/GaAs multiple-quantum-well (MQW) on Si is enhanced with a decrease in the spectral width.