N-type doping of 4H-SiC with phosphorus co-implanted with C or Si

Phosphorus has been shown to be a much better dopant than nitrogen in 4H-Si C for heavily doped n-type implantation. In this paper, the effect of co-im plantation of phosphorus with carbon or silicon is studied. The implanted l ayers are characterized by an analytical technique (secondary ion mass spec trometry). Electrical measurements include sheet resistance and Hall measur ements as well as forward and reverse I-V characterization of the resulting n+/p rectifiers. The effect of co-implantation of P/C and P/Si on the elec trical activation of phosphorus has been monitored. After 1700 degreesC ann eal, respective sheet resistance values of 111 and 132 ohm/square were meas ured. Forward characteristics of these diodes are observed to obey a genera lized Sah-Noyce-Shockley multiple level recombination model with four shall ow levels and one deep level.