Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP

The application of the strain induced lateral ordering process to the strai n-compensated (Ga0.22In0.78As)(m)(Ga0.22In0.78P)(m) short period superlatti ces is investigated. The superlattices have been grown at low temperatures by solid source molecular beam epitaxy (MBE) on (001) InP. These superlatti ces have been used in multiquantum well heterostructures using InP as barri ers. The anisotropic polarization of photoluminescence shows the existence of lateral modulation. Dark-field images using the 220 reflection gives mod ulated contrast in the superlattice layers. High-resolution transmission el ectron microscopy shows local variations of the interplanar spacing of the (200) planes as well as the angles they form with the (002) planes.