PREPARATION OF CUGAS2 ZNS STRUCTURES ON GAAS(1,00) SUBSTRATE BY PULSED EXCIMER-LASER DEPOSITION/

Authors
UCHIKI H YAMAGUCHI M
Citation
H. Uchiki et M. Yamaguchi, PREPARATION OF CUGAS2 ZNS STRUCTURES ON GAAS(1,00) SUBSTRATE BY PULSED EXCIMER-LASER DEPOSITION/, JPN J A P 2, 36(7A), 1997, pp. 868-870
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
7A
Year of publication
1997
Pages
868 - 870
Database
ISI
SICI code
Abstract
C-axis-oriented CuGaS2 layers were prepared on ZnS/GaAs(100) substrate s by KrF excimer laser deposition. The influence of substrate temperat ure and laser fluence on layer characteristics was studied. Relatively smooth CuGaS2 layers with a surface roughness of about 30 nm were obt ained under optimized preparation condition.