STRUCTURAL AND ELECTRICAL-PROPERTIES OF BA0.5SR0.5TIO3 FILMS ON IR AND IRO2 ELECTRODES

High-dielectric Ba0.5Sr0.5TiO3 (BST) thin films are grown on Ir and Ir O2 electrodes by a rf sputtering method. The structural and electrical properties of BST films are investigated. After postannealing at 750 degrees C for 30 min in N-2 atmosphere, the interface between BST and IrO2 remains flat and the IrO2 does not show any structural change. On the other hand, a thin IrO2 layer is formed at the interface between the BST and Ir after the same post-annealing. A larger grain size of B ST film is obtained on the Ir electrode compared to that of BST him on the IrO2 electrode. Dielectric constants of 36-nm-thick BST films on Ir and IrO2 are 338 and 290, respectively. The leakage current densiti es of both the Pt/BST/Ir and Pt/BST/IrO2 capacitors are about 20 nA/cm (2) at +/-1.5V, which is sufficiently small for application to dynamic random access memory devices.