FIELD-EFFECT TRANSISTOR WITH POLYANILINE AND POLY(2-ALKYLANILINE) THIN-FILM AS SEMICONDUCTOR

Field-effect transistors (FETs) with polyaniline (PANI) and poly (2-al kylaniline) films as the semiconductor, respectively, are fabricated. These FETs have ideal source current-drain voltage characteristics wit h the field-effect mobilities depending on the length of alkyl side ch ain. The modulation ratio of PANI and poly(2-alkylaniline) FETs decrea ses with an increase in the thickness of polymer films. The modulation ratio and mobility of the HCl-doped PANI FET increase significantly r elative to those of the undoped PANI FET.