Effect of carrier gas on chemical vapor deposition of copper with (hexafluoroacetylacetonate) Cu-(I)(3,3-dimethyl-1-bulene)

The effect of carrier gases, such as argon, nitrogen, and hydrogen on the d eposition rate. film morphology, resistivity, and chemical composition of c opper films deposited with (hfac: hexafluoroacetylacetonate)Cu-(1)(DMB: 3,3 -dimethyl-1-butene) precursor was investigated at substrate temperatures be tween 100 and 275 degreesC. The deposition rate was the highest and the res istivity was the lowest with the: hydrogen carrier gas and the film had the smallest amount of impurities such as carbon, oxygen, and fluorine. It is believed that hydrogen enhances the surface reaction and forms more volatil e species with impurity atoms. The diffusion of the reactant in hydrogen ga s is higher, which also leads to the higher deposition rate. Below the subs trate temperature of 150 degreesC, the activation energy of the deposition rate was about 150 kJ mol(-1) on thermal oxide and about 84 similar to 96 k J mol(-1) on TiN with both argon and nitrogen, but it is about 54 kJ mol(-1 ) with hydrogen carrier gas on both surfaces. The copper him deposited with hydrogen carrier gas has a higher ratio of the Cu(111) peak intensity to t he Cu(200) peak intensity than in argon carrier gas. (C) 2001 The Electroch emical Society. [DOI: 10.1149/1.1375168] All rights: reserved.