Citation
D. Soderstrom et al., Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy, J ELCHEM SO, 148(7), 2001, pp. G375-G378
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651
→ ACNP
Volume
148
Issue
7
Year of publication
2001
Pages
G375 - G378
Database
ISI
SICI code
0013-4651(200107)148:7<G375:SORIGB>2.0.ZU;2-2
Abstract
Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-p
hase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(
II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 1
0(18) cm(-3) have been achieved. The Ru incorporation has been studied in t
erms of incorporation flux, and it is shown that the growth rate limits: th
e incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-I
nP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omeg
a cm and greater than 10(10) Omega cm have been obtained, respectively. (C)
2001 The Electrochemical Society.