Analytic models for the temperature dependence of the breakdown voltage of6H-and 4H-SiC rectifiers

In this research, the temperature dependence of the breakdown voltage of GH -SIC and 4H-SiC rectifiers was modeled in both nun reachthrough diodes (NRD s) and reachthrough diodes (RDs). The breakdown voltage analysis was based on the ionization integral using all accurate hole impact ionization coeffi cient and a seventh- order approximation. SiC rectifiers exhibited a positi ve temperature coefficient in breakdown voltage which was adequate for high -temperature applications. The breakdown voltage increased as M(T)(-1/4) in NRDs and as RI(T)(-1/8) in RDs both for GH-SIC and 4H-SiC.