Infrared photodetector of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures

Authors
Kim, MD Choo, AG Ko, SS Baek, DH Hong, SC
Citation
Md. Kim et al., Infrared photodetector of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures, J KOR PHYS, 39(1), 2001, pp. 32-34
Citations number
6
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
1
Year of publication
2001
Pages
32 - 34
Database
ISI
SICI code
0374-4884(200107)39:1<32:IPOSIQ>2.0.ZU;2-2
Abstract
We have designed and fabricated a quantum dot infrared photodetector which utilizes the lateral transport of photoexcited carriers in AlGaAs/GaAs two- dimensional (2D) channels. A photocurrent signal has been observed in the r ange of 9 similar to 14 mum with a peak at 11.5 mum due to the bound-to-con tinuum intersubband absorption of the normal incidence radiation in the sel f-assembled InAs quantum dots. The peak responsivity has been measured to b e 0.8 A/W at 77 K.