Novel poly-Si solar cell using a preferentially removed grain boundary andITO electrode

Authors
Citation
Dg. Lim et al., Novel poly-Si solar cell using a preferentially removed grain boundary andITO electrode, J KOR PHYS, 39(1), 2001, pp. 41-44
Citations number
12
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
1
Year of publication
2001
Pages
41 - 44
Database
ISI
SICI code
0374-4884(200107)39:1<41:NPSCUA>2.0.ZU;2-1
Abstract
We developed a poly-Si solar cell with a novel structure for terrestrial ap plications. Since the grain boundary (GB) in the polycrystalline silicon (p oly-Si) reduces the conversion efficiency of the poly-Si solar cell. to min imize the GB effect, we performed a preferential grain boundary etching. PO Cl3 n-type emitter doping, and then an tin-doped indium-oxide (ITO) film gr owth on poly-Si. An rf-magnetron sputter-grown film was used for easy forma tion of the top electrode. The ITO films showed a resistivity of 1.14 x 10( -4) Omega -cm and a transmittance of 90.5 70 for a wavelength of 594 nm. Th e ITO films served riot only as top electrodes but also as effective AR coa ting layers. The ITO film properties were strongly influenced by the prepar ation temperatures.. A substrate temperature of 400 degreesC gave the highe st conversion efficiency for the poly-Si solar cells. With well-fabricated poly-Si solar cells, we were able to achieve a conversion efficiency as hig h as 15 % at an input power of 20 mW/cm(2).