Static and transient characteristics of Si : Au-Based V-groove P-I-N photodetectors

A new p-i-n photodetector was designed and fabricated using a V-groove stru cture of gold-doped n-type silicon. A basic principle of optical detection was: presented based on a single gold acceptor level. The measured threshol d voltage decreased rapidly when the light power was increased. The differe ntial sensitivity wits calculated as 0.41/muW. The turn-on delay and the ri se times decreased with increasing optical pulse power. There was all inher ent time delay ill the turn-oil process of Si:Au p-i-n photodetectors. The turn-off delay was: negligible, and the fall time was less than 0.02 mus.