Boron-interstitial clustering in 0.15-mu m PMOSFETs

We report the simulation results and modeling of a boron-interstitial clust ering which causes: boron to be immobilized at concentrations much lower th an solid solubility under transient diffusion conditions, To correctly pred ict the dopant-defect clustering, we calibrate the most fundamental paramet ers of the point defect arid extended defects before extracting dopant-defe ct parameters. Two simple dopant-defects clustering model are introduced to explain the boron diffusion. Also our simple clustering model was applied to our 0.15-mum PMOSFETs. Our simulation results show good agreement with t he SIMS data, which enables better prediction of both implant processes and shallow boron profiles for p-type source/drain structures.