Monte Carlo simulation of ultra-low-energy ion implantation

In this paper, a Monte Carlo method for an accurate and time-efficient 3D s imulation of an ultra-low -energy (sub 2-keV) ion implantation is proposed. The damage profile and the doping profile exhibit excellent agreement with the secondary ion mass spectroscopy and Rutherford backscattering spectros copy data, respectively. The ion distribution replica method was developed and implemented into the ultra-low-energy model and provided computational efficiency in the 3D simulation. The calculated profile from our 3D Monte-C arlo simulation has been incorporated into a topographically complex struct ure for estimating the electrical properties.