Study of polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition

Authors
Won, SH Youn, JH Jang, J Moon, BY
Citation
Sh. Won et al., Study of polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition, J KOR PHYS, 39(1), 2001, pp. 123-126
Citations number
9
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
1
Year of publication
2001
Pages
123 - 126
Database
ISI
SICI code
0374-4884(200107)39:1<123:SOPSFD>2.0.ZU;2-4
Abstract
Polycrystalline silicon (poly-Si) thin films were deposited by using induct ively coupled plasma chemical vapor deposition with SiH4/H-2 mixtures. The quality of the poly-Si was improved by increasing the RF power and the hydr ogen dilution ratio. The poly-Si deposited at a RF power uf similar to 1000 with an addition of Ha showed a Raman polycrystalline volume fraction of 8 5.7 % a FWHM of 6.4 cm(-1), deposition rate of 9.64 Angstrom /s and a SEM g rain size of similar to 3000 Angstrom.